Realme GT Neo5 Official Announcement: 16GB+1TB Full Memory

Realme will hold a new product release conference on February 9th at 14:00 PM, and officially launch 240W fast charger flagship — Realme GT Neo5.

This afternoon, during the preheat, officials announced the new phone’s ultra-luxurious memory specifications, which will come with a 16GB+1TB full memory combination, one of the strongest specs in the phone industry.

And this specification, it has been consistent with many home PC, can realize 45 background applications alive number, use experience greatly improved.

As for the core configuration, GT Neo5 will be equipped with the highly acclaimed Snapdragon 8+ chip, which is built by 4nm technology of Taiwan Semiconductor Manufacturing Co., LTD., a three-year turnaround work of Qualcomm.

At the same time, the machine will also be equipped with a single display chip Plus, which can share the GPU rendering work of the performance chip. Through MEMC motion compensation technology, the game picture can always be stable at a high frame rate, but also reduce power consumption.

In addition, GT Neo5 also uses a customized 1.5K gold resolution screen to achieve a fine balance of display and power consumption. The combination of these three points makes the battery life of the new machine very strong.

Of course, the biggest highlight of the machine or 240W top fast charge, which is now the power limit of the type-c interface, reached the top speed at the present stage, only charging 30 seconds can talk for 2 hours, less than 10 minutes can be charged to 100%.

Realme full level second charge 240W is also the industry’s first longevity flash charge exceeding 200W. It is the first time to adjust the charge and discharge curve under 20V high voltage. After 1600 complete charging cycles, the effective capacity of the battery is not less than 80%.

In addition, the new phone will also offer a 150W version with a larger battery, which will have better battery life while also being able to recharge in super-fast 16 minutes.