Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has successfully developed the industry’s first 10-nanometer (nm) class* 8-gigabit (Gb) LPDDR5 DRAM. This development of 8Gb LPDDR5 represents a major step forward for low-power mobile memory solutions. Samsung will continue to expand our next-generation 10nm-class DRAM lineup as we accelerate the move toward greater use of premium memory across the global landscape.
Samsung’s new LPDDR5 tech hits 6.4Gbps of bandwidth that provides some serious bandwidth numbers of 51.2GB/sec, enough to transfer 14 x 1080p movies (at 3.7GB each) in a single second. Samsung will provide its new LPDDR5 in two bandwidths: 6.4Gbps at 1.1V and 5.5Gbps at 1.05V. Samsung’s new LPDDR5 tech hits 6.4Gbps of bandwidth that provides some serious bandwidth numbers of 51.2GB/sec, enough to transfer 14 x 1080p movies (at 3.7GB each) in a single second. Samsung will provide its new LPDDR5 in two bandwidths: 6.4Gbps at 1.1V and 5.5Gbps at 1.05V.
Power consumption has been reduced with Samsung’s new LPDRR5 tech, with a new “deep sleep mode” that slices the power consumption to half of what current LPDDR4X offers in “idle mode”, which is impressive. Overall, LPDDR5 will provide 30% power reduction over LPDDR4X meaning more performance, and longer lasting battery life of next-gen smartphones.
Samsung has made its new LPDDR5 for the future of smartphones with 5G technology right around the corner, and the increased used of AI on our smartphones. We should expect to see Samsung’s new LPDDR5 memory inside of smartphones in the coming months, and then for years to come with next-gen smartphones announced in 2019 and beyond.
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Samsung claims that it has completed functional testing and validation of an 8GB LPDDR5 DRAM prototype, consisting of eight 8Gb LPDDR5 chips. The company will begin mass production of its next-generation DRAM lines (LPDDR5, DDR5, and GDDR6) at its plant in Pyeongtaek, Korea.
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